0.5 C 12 ghz low noise gallium arsenide fet technical data features ? low noise figure: 0.5 db typical at 4 ghz ? low bias: v ds = 2 v, i ds = 25 ma ? high associated gain: 14.0 db typical at 4 ghz ? high output power: 21.0 dbm typical p 1 db at 4 ghz atf-10100 chip outline electrical specifications, t a = 25 c symbol parameters and test conditions [1] units min. typ. max. nf o optimum noise figure: v ce = 2 v, i ds = 25 ma f = 2.0 ghz db 0.4 f = 4.0 ghz db 0.55 0.7 f = 6.0 ghz db 0.8 g a gain @ nf o ; v ds = 2 v, i ds = 25 ma f = 2.0 ghz db 17.0 f = 4.0 ghz db 12.0 14.0 f = 6.0 ghz db 12.0 p 1 db power output @ 1 db gain compression f = 4.0 ghz dbm 21.0 v ds = 4 v, i ds = 70 ma g 1 db 1 db compressed gain: v ds = 4 v, i ds = 70 ma f = 4.0 ghz db 15.0 g m transconductance: v ds = 2 v, v gs = 0 v mmho 80 140 i dss saturated drain current: v ds = 2 v, v gs = 0 v ma 70 130 180 v p pinchoff voltage: v ds = 2 v, i ds = 1 ma v -3.0 -1.3 -0.8 note: 1. rf performance is determined by packaging and testing 10 devices per wafer . description the atf-10100 is a high perfor- mance gallium arsenide schottky- barrier-gate field effect transistor d ss g g chip. its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 ghz frequency range. this gaas fet device has a nominal 0.3 micron gate length interconnects between drain fingers. total gate periphery is 500 microns. proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
2 atf-10100 absolute maximum ratings absolute symbol parameter units maximum [1] v ds drain-source voltage v +5 v gs gate-source voltage v -4 v gd gate-drain voltage v -7 i ds drain current ma i dss p t power dissipation [2,3] mw 430 t ch channel temperature c 175 t stg storage temperature [4] c -65 to +175 notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case temperature = 25 c. 3. derate at 4.4 mw/ c for t case > 78 c. 4. the small spot size of this tech- nique results in a higher, though more accurate determination of q jc than do alternate methods. see applications primer iiia for more information. atf-10100 typical performance, t a = 25 c part number ordering information part number devices per tray atf-10100-gp3 50 thermal resistance: q jc = 225 c/w; t ch = 150 c liquid crystal measurement: 1 m m spot size [4] atf-10100 noise parameters: v ds = 2 v, i ds = 25 ma freq. nf o g opt ghz db mag ang r n /50 1.0 0.4 0.78 13 0.40 2.0 0.4 0.55 27 0.29 4.0 0.55 0.39 65 0.22 6.0 0.8 0.41 105 0.16 8.0 1.0 0.46 144 0.10 i ds (ma) figure 2. optimum noise figure and associated gain vs. i ds . v ds = 2 v, f = 4.0 ghz. nf o (db) 0102030 figure 3. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 2 v, i ds = 25 ma. frequency (ghz) gain (db) 16 14 12 10 g a (db) 1.5 1.0 0.5 0 g a nf o |s 21 | 2 msg mag 1.0 2.0 4.0 6.0 8.0 10.0 12.0 30 20 10 0 figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 4 v, i ds = 70 ma. frequency (ghz) gain (db) |s 21 | 2 msg mag 1.0 2.0 4.0 6.0 8.0 10.0 12.0 30 20 10 0 frequency (ghz) nf o (db) figure 1. optimum noise figure and associated gain vs. frequency. v ds = 2 v, i ds = 25 ma, t a = 25 c. 2.0 1.5 1.0 0.5 0 18 15 12 9 6 g a (db) 2.0 6.0 4.0 8.0 10.0 12.0 g a nf o
3 typical scattering parameters, common source, z o = 50 w , t a =25 c, v ds =2 v, i ds = 25 ma freq. s 11 s 21 s 12 s 22 mhz mag. ang. db mag. ang. db mag. ang. mag. ang. 1.0 .93 -46 17.7 7.63 148 -25.5 .053 64 .33 -56 2.0 .83 -78 15.6 6.08 127 -21.4 .085 52 .31 -63 3.0 .78 -94 13.9 4.97 114 -19.8 .102 45 .30 -72 4.0 .72 -104 12.4 4.18 103 -18.7 .116 41 .29 -80 5.0 .70 -120 11.2 3.65 92 -17.9 .127 36 .25 -90 6.0 .68 -139 10.0 3.18 80 -17.6 .132 31 .19 -113 7.0 .71 -157 8.6 2.69 69 -17.5 .133 25 .18 -156 8.0 .72 168 7.4 2.35 60 -17.5 .133 22 .20 -178 9.0 .71 -177 6.5 2.12 53 -17.4 .135 19 .22 174 10.0 .70 175 6.0 1.99 46 -16.9 .143 17 .22 169 11.0 .70 167 5.5 1.88 38 -16.6 .148 15 .23 164 12.0 .70 162 5.0 1.77 31 -16.3 .154 13 .24 153 13.0 .70 159 4.5 1.68 25 -15.8 .162 11 .26 143 14.0 .70 155 4.1 1.61 20 -15.5 .168 10 .28 133 15.0 .73 149 3.9 1.56 14 -15.0 .177 8 .30 123 16.0 .77 138 3.2 1.45 5 -14.7 .184 6 .32 119 17.0 .76 134 1.8 1.23 0 -14.4 .190 5 .35 114 18.0 .77 134 1.3 1.16 -1 -13.9 .201 4 .38 106 typical scattering parameters, common source, z o = 50 w , t a =25 c, v ds =4 v, i ds = 70 ma freq. s 11 s 21 s 12 s 22 mhz mag. ang. db mag. ang. db mag. ang. mag. ang. 1.0 .87 -60 20.6 10.72 136 -26.4 .048 55 .33 -59 2.0 .74 -96 17.5 7.50 113 -23.5 .067 43 .29 -66 3.0 .72 -112 15.2 5.77 101 -22.2 .078 39 .28 -69 4.0 .67 -122 13.4 4.68 91 -21.3 .086 38 .27 -72 5.0 .67 -137 12.0 3.97 81 -20.6 .093 36 .24 -77 6.0 .68 -154 10.5 3.36 70 -20.3 .097 35 .17 -95 7.0 .73 -168 9.0 2.81 61 -20.1 .099 33 .13 -127 8.0 .74 -177 7.7 2.44 54 -19.8 .102 31 .12 -159 9.0 .75 175 6.8 2.19 47 -19.6 .105 31 .12 -165 10.0 .75 166 6.2 2.04 39 -18.9 .113 29 .13 -171 11.0 .75 156 5.6 1.90 32 -18.4 .120 27 .13 -177 12.0 .74 150 5.1 1.79 25 -17.9 .128 26 .14 173 13.0 .74 148 4.6 1.69 19 -16.9 .143 25 .15 166 14.0 .75 145 4.2 1.62 14 -16.2 .155 24 .17 154 15.0 .76 140 3.9 1.57 9 -15.7 .164 21 .21 142 16.0 .77 135 3.2 1.45 -1 -15.5 .168 18 .24 133 17.0 .79 130 1.8 1.23 -6 -15.3 .171 18 .28 125 18.0 .80 125 1.3 1.16 -6 -14.4 .191 18 .32 117
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-8702e (11/99) 279.4 m 11 mil 218 m 8.58 mil 218 m 8.58 mil 32 m 1.26 mil 163 m 6.42 mil 218 m 8.58 mil 304.8 m 12 mil note: die thickness is 4.5 mil, and backside metallization is 200 ? ti and 2000 ? au. d ss g g atf-10100 chip dimensions
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